october 2010 ?2010 fairchild semiconductor corporation fdd4141_f085 rev.c www.fairchildsemi.com 1 fdd4141_f085 p-channel powertrench ? mosfet fdd4141_f085 p-channel powertrench ? mosfet -40v, -50a, 12.3m features ? max r ds(on) = 12.3m at v gs = -10v, i d = -12.7a ? max r ds(on) = 18.0m at v gs = -4.5v, i d = -10.4a ? high performance trench tech nology for extremely low r ds(on) ? qualified to aec q101 ? rohs compliant general description this p-channel mosfet has been produced using fairchild semiconductor?s proprietary powertrench ? technology to deliver low r ds(on) and optimized bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/ inverter applications. applications ? inverter ? power supplies mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -40 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c -50 a -continuous (silicon limited) t c = 25c -58 -continuous t a = 25c (note 1a) -10.8 -pulsed -100 e as single pulse avalanche energy (note 3) 337 mj p d power dissipation t c = 25c 69 w power dissipation t a = 25c (note 1a) 2.4 t j , t stg operating and storage junction temperature range -55 to +150 c r jc maximum thermal resistance, junction to case 1.8 c/w r ja maximum thermal resistance, junction to ambient (note 1a) 52 device marking device package reel size tape width quantity fdd4141 fdd4141_f085 d-pak (to-252) 13?? 12mm 2500 units g s d to-252 d-pak (to-252) s g d
fdd4141_f085 p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation fdd4141_f085 rev.c electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -40 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25 c -29 mv/ c i dss zero gate voltage drain current v ds = -32v, v gs = 0v -1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -1 -1.8 -3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25 c 5.8 mv/ c r ds(on) static drain to source on resistance v gs = -10v, i d = -12.7a 10.1 12.3 m : v gs = -4.5v, i d = -10.4a 14.5 18.0 v gs = -10v, i d = -12.7a, t j = 125 c 15.3 18.7 g fs forward transconductance v ds = -5v, i d = -12.7a 38 s dynamic characteristics c iss input capacitance v ds = -20v, v gs = 0v, f = 1mhz 2085 2775 pf c oss output capacitance 360 480 pf c rss reverse transfer capacitance 210 310 pf r g gate resistance f = 1mhz 4.6 : switching characteristics t d(on) turn-on delay time v dd = -20v, i d = -12.7a, v gs = -10v, r gen = 6 : 10 19 ns t r rise time 7 13 ns t d(off) turn-off delay time 38 60 ns t f fall time 15 27 ns q g total gate charge v gs = 0v to -10v v dd = -20v, i d = -12.7a 36 50 nc q g total gate charge v gs = 0v to -5v 19 27 nc q gs gate to source charge 7 nc q gd gate to drain ?miller? charge 8 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = -12.7a (note 2) -0.8 -1.2 v t rr reverse recovery time i f = -12.7a, di/dt = 100a/ p s 29 44 ns q rr reverse recovery charge 26 40 nc notes : 1: r t ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r t jc
fdd4141_f085 p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation fdd4141_f085 rev.c typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 20 40 60 80 100 v gs = -4v v gs = -10v v gs = -3v v gs = -3.5v v gs = -4.5v pulse duration = 80 p s duty cycle = 0.5%max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 020406080100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = -4v v gs = -3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance - i d , drain current(a) v gs = -4.5v v gs = -3v v gs = -10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = -12.7a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 5 15 25 35 45 55 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -12.7a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 20 40 60 80 100 v ds = -5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdd4141_f085 p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation fdd4141_f085 rev.c figure 7. 0 8 16 24 32 40 0 2 4 6 8 10 i d = -12.7a v dd = -20v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -15v gate charge characteristics figure 8. 0.1 1 10 100 1000 10000 40 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 30 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) - i as , avalanche current(a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 limited by package r t jc = 1.8 o c/w v gs = -4.5v v gs = -10v -i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.1 1 10 100 0.1 1 10 100 200 100us 1ms 10ms -i d , drain current (a) -v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc figure 12. t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t c ? 125 ------------------------ 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 100 1000 10000 v gs = -10v single pulse r t jc = 1.8 o c/w p ( pk ) , peak transient power (w) t, pulse width (s) 50 s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
fdd4141_f085 p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation fdd4141_f085 rev.c figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 2 duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r t jc = 1.8 o c/w 0.005 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
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